| PART |
Description |
Maker |
| 121NQ045 |
Schottky Rectifier; Package: HALF_PAK; IO (A): 120; VR (V): 45; IFSM (A): 2000; VF (V): 0.7; 120 A, 45 V, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| SHD123668N SHD123668P SHD123668D |
POWER SCHOTTKY RECTIFIER Very Low Reverse Leakage 120 A, SILICON, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| V20120SHM3-4W V20120S-M3-4W VI20120SHM3-4W VI20120 |
High-Voltage Trench MOS Barrier Schottky Rectifier
20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| 123SPC100AR |
120 A, SILICON, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| V20120S-E3/4W |
20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
|
VISHAY SEMICONDUCTORS
|
| SBR12040R |
120 A, 40 V, SILICON, RECTIFIER DIODE, DO-203AB
|
MICROSEMI CORP-LAWRENCE
|
| SHD122612D SHD122612N SHD122612P SHD122612 |
HIGH CURRENT HERMETIC SCHOTTKY POWER MODULE 120 A, SILICON, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| 1N1341B 1N1585 1N1587 1N1068 1N1064 1N2232A 1N2232 |
SILICON POWER RECTIFIER 16 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA
Standard Rectifier (trr more than 500ns)
N/A
SILICON POWER RECTIFIER
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| SM30CXC614 SM30CXC624 SM14CXC170 SM02CXC190 SM02CX |
1160 A, 3000 V, SILICON, RECTIFIER DIODE
1106 A, 3000 V, SILICON, RECTIFIER DIODE
440 A, 1400 V, SILICON, RECTIFIER DIODE
760 A, 200 V, SILICON, RECTIFIER DIODE
440 A, 200 V, SILICON, RECTIFIER DIODE
940 A, 2000 V, SILICON, RECTIFIER DIODE
1610 A, 2600 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| IRG4BC15UD-LPBF IRG4BC15UD-SPBF IRG4BC15UD-L IRG4B |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
|
International Rectifier
|
|
